Samsung has confirmed its investment plan for the 6th-generation DRAM production line at its Pyeongtaek P4 plant, targeting mass production by June 2025. The new DRAM, known as ‘1c’, utilizes 10nm-class technology and is positioned as a next-generation product in the global semiconductor industry.
The Pyeongtaek P4 facility, a comprehensive semiconductor production centre, was initially completed with essential infrastructure but faced delays in production line construction due to a downturn in the semiconductor market. With the industry’s recovery in late 2023, Samsung shifted its strategy towards expansion, installing NAND flash equipment and now committing to 1c DRAM production.
Samsung plans to begin 1c DRAM production by the end of this year, with potential applications in High Bandwidth Memory (HBM4) anticipated by the second half of 2025. The increased demand for DRAM, driven by the growth of high-value products like HBM, is expected to contribute to significant revenue increases in the memory industry.
TrendForce reports that DRAM and NAND Flash revenues could rise by 75% and 77% respectively in 2024, fueled by improved supply-demand dynamics and the expanding market for advanced memory products. Samsung’s P4L facility will be a key site for memory capacity expansion, starting with NAND in 2025 and followed by mass production of 1c DRAM in 2026.
